| Nr. | Teilname | Beschreibung | Hersteller |
| 1163761 | STD100NH03L | N-CHANNEL 30V - 0.005 OHM - 60A DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1163762 | STD100NH03LT4 | N-CHANNEL 30V - 0.005 OHM - 60A DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1163763 | STD10N60M2 | N-Kanal 600 V, 0,55 Ohm typ. 7,5 A MDmesh II Plus (TM) niedriger Qg Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1163764 | STD10NF06L | N-CHANNEL 60V 0.1 ENERGIE MOSFET DES OHM-10A DPAK STRIPFET II | ST Microelectronics |
| 1163765 | STD10NF06L | N-CHANNEL 60V 0.1 ENERGIE MOSFET DES OHM-10A DPAK STRIPFET II | SGS Thomson Microelectronics |
| 1163766 | STD10NF10 | N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1163767 | STD10NF10 | N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1163768 | STD10NF10T4 | N-CHANNEL 100V - 0.115 OHM - 13A IPAK/DPAK NIEDRIGER GATTER-AUFLADUNG STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1163769 | STD10NF30 | Automotive-N-Kanal 300 V, 0,28 Ohm typ., 10 A MESH OVERLAY (TM) Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
| 1163770 | STD10NM50N | N-Kanal 500 V, 0,53 Ohm, 7 A DPAK MDmesh (TM) II Power MOSFET | ST Microelectronics |
| 1163771 | STD10NM60N | N-Kanal 600 V, 0,53 Ohm, 10 A, DPAK MDmesh (TM) II Power MOSFET | ST Microelectronics |
| 1163772 | STD10NM60ND | N-Kanal 600 V, 0,57 Ohm, 8 A, DPAK FDmesh (TM) II Power MOSFET | ST Microelectronics |
| 1163773 | STD10NM65N | N-Kanal 650 V, 0,43 Ohm, 9 A, DPAK zweiten Generation MDmesh (TM) Power MOSFET | ST Microelectronics |
| 1163774 | STD10P6F6 | P-Kanal 60 V, 0,13 Ohm typ., 10 A STripFET (TM) VI DeepGATE (TM) Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1163775 | STD10PF06 | P-CHANNEL 60V - 0.18 OHM - 10A IPAK/DPAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1163776 | STD10PF06 | P-CHANNEL 60V - 0.18 OHM - 10A IPAK/DPAK STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1163777 | STD10PF06 | P - FÜHRUNG 60V - 0.18 Ohm - 10A TO-252 STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1163778 | STD10PF06-1 | P-CHANNEL 60V - 0.18 OHM - 10A IPAK/DPAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1163779 | STD10PF06T4 | P-CHANNEL 60V - 0.18 OHM - 10A IPAK/DPAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1163780 | STD110 ASIC | PLL 2013X | Samsung Electronic |
| 1163781 | STD110 ASIC | Buch-Inhalt | Samsung Electronic |
| 1163782 | STD110 ASIC | Eigenschaften | Samsung Electronic |
| 1163783 | STD110 ASIC | Über Sek ASIC | Samsung Electronic |
| 1163784 | STD110 ASIC | Einleitung | Samsung Electronic |
| 1163785 | STD110NH02L | N-CHANNEL 24V - 0.0044 OHM - 80A DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1163786 | STD110NH02L | N-Kanal 24V - 0,0044 Ohm - 80A DPAK STripFET III-Leistungs-MOSFET | SGS Thomson Microelectronics |
| 1163787 | STD110NH02LT4 | N-CHANNEL 24V - 0.0044 OHM - 80A DPAK STRIPFET III ENERGIE MOSFET | ST Microelectronics |
| 1163788 | STD111 ASIC | Buch-Inhalt | Samsung Electronic |
| 1163789 | STD111 ASIC | Einleitung | Samsung Electronic |
| 1163790 | STD111 ASIC | Eigenschaften | Samsung Electronic |
| 1163791 | STD111 ASIC | PLL 2013X | Samsung Electronic |
| 1163792 | STD11N65M2 | N-Kanal 650 V, 0,6 Ohm typ., 7 A MDmesh II Plus (TM) niedriger Qg Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1163793 | STD11N65M5 | N-Kanal 650 V, 0,43 Ohm, 9 A MDmesh (TM) V-Leistungs-MOSFETs im DPAK-Gehäuse | ST Microelectronics |
| 1163794 | STD11NM50N | N-Kanal 500 V, 0,4 Ohm, 8,5 A MDmesh (TM) II Power MOSFET in DPAK | ST Microelectronics |
| 1163795 | STD11NM60N | N-Kanal 600 V, 0,37 Ohm, 10 A MDmesh (TM) II Power MOSFET in einem DPAK-Gehäuse | ST Microelectronics |
| 1163796 | STD11NM60ND | N-Kanal 600V - 0.37Ohm - 10A - FDmesh II Power MOSFET DPAK | ST Microelectronics |
| 1163797 | STD11NM65N | N-Kanal 650 V, 0.425 Ohm typ. 11 A MDmesh (TM) II Power MOSFET im DPAK-Gehäuse | ST Microelectronics |
| 1163798 | STD120N4F6 | N-Kanal-40 V, 3,5 mOhm, 80 A, DPAK, STripFET (TM) VI DeepGATE (TM) Power MOSFET | ST Microelectronics |
| 1163799 | STD120N4LF6 | N-Kanal-40 V, 3,1 mOhm, 80 A, DPAK STripFET (TM) VI DeepGATE (TM) Power MOSFET | ST Microelectronics |
| 1163800 | STD1224N | N-Führung Verbesserung Modus Fangen Effekt-Transistor auf | SamHop Microelectronics Corp. |
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