| Nr. | Teilname | Beschreibung | Hersteller |
| 1180881 | STW18N65M5 | N-Kanal 650 V, 0.198 Ohm typ. 15 A MDmesh (TM) V-Leistungs-MOSFETs in TO-247-Gehäuse | ST Microelectronics |
| 1180882 | STW18NB40 | N-CHANNEL 400V 0.19 OHM18.4A TO-247/ISOWATT218 POWERMESH MOSFET | ST Microelectronics |
| 1180883 | STW18NB40 | N-CHANNEL 400V - 0.19W - 18.4A TO-247/ISOWATT218 PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1180884 | STW18NB40 | N-CHANNEL 400V 0.19 OHM18.4A TO-247/ISOWATT218 POWERMESH MOSFET | SGS Thomson Microelectronics |
| 1180885 | STW18NK60Z | N-CHANNEL 600V - 0.27 OHM - 16A TO-247 ZENER-PROTECTED SUPERMESH™ MOSFET | ST Microelectronics |
| 1180886 | STW18NK80Z | N-CHANNEL 800V 0.34 ENERGIE MOSFET DES OHM-18A TO-247 ZENER-PROTECTED SUPERMESH | ST Microelectronics |
| 1180887 | STW18NM60N | N-Kanal 600 V, 0,26 Ohm typ. 13 A MDmesh (TM) II Power MOSFET in TO-247 | ST Microelectronics |
| 1180888 | STW18NM60ND | N-Kanal 600 V, 0,25 Ohm typ. 13 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) im TO-247-Gehäuse | ST Microelectronics |
| 1180889 | STW18NM80 | N-Kanal 800 V, 0,25 Ohm, 17 A, MDmesh (TM) Power MOSFET in TO-247-Gehäuse | ST Microelectronics |
| 1180890 | STW19NM50N | N-Kanal 500 V, 0,2 Ohm, 14 A MDmesh (TM) II Power MOSFET in TO-247 | ST Microelectronics |
| 1180891 | STW19NM60N | Automotive-N-Kanal 600 V, 0,26 Ohm, 13 A MDmesh (TM) II Power MOSFET in TO-247-Gehäuse | ST Microelectronics |
| 1180892 | STW200NF03 | N-CHANNEL 30V - 0.002 OHM - 120A TO-247 ULTRA NIEDRIGER ON-RESISTANCE STRIPFET II MOSFET | ST Microelectronics |
| 1180893 | STW200NF03 | N-Kanal 30V - 0.002 Ohm - 120A TO-247 ULTRA LOW ON-Widerstand MOSFET STripFET II | SGS Thomson Microelectronics |
| 1180894 | STW20N65M5 | N-Kanal 650 V, 0.160 Ohm typ. 18 A MDmesh (TM) V-Leistungs-MOSFETs in TO-247-Gehäuse | ST Microelectronics |
| 1180895 | STW20N95K5 | N-Kanal 950 V, 0.275 Ohm typ., 17.5 Eine Zener-geschützt SuperMESH (TM) 5 Power MOSFET in TO-247-Gehäuse | ST Microelectronics |
| 1180896 | STW20NA50 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1180897 | STW20NA50 | N - FÜHRUNG VERBESSERUNG MODUS-SCHNELLER ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1180898 | STW20NA50 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1180899 | STW20NB50 | N-CHANNEL VERBESSERUNG MODUS-SEHR NIEDRIGER GATTER-AUFLADUNG ENERGIE MOSFET | ST Microelectronics |
| 1180900 | STW20NB50 | N - FÜHRUNG 500V - 0.22Ohm - 20A - TO-247 PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1180901 | STW20NC50 | N-CHANNEL 500V - 0.22 OHM18.4A TO-247 POWERMESH II MOSFET | ST Microelectronics |
| 1180902 | STW20NC50 | N-CHANNEL 500V - 0.22 OHM18.4A TO-247 POWERMESH II MOSFET | SGS Thomson Microelectronics |
| 1180903 | STW20NK50Z | N-CHANNEL 500V - 0.23 OHM - 17A TO-247 ZENER-PROTECTED SUPERMESH POWERMOSFET | ST Microelectronics |
| 1180904 | STW20NK70Z | N-CHANNEL 700V - 0.25 OHM - 20A TO-247 Zener-Geschützter SuperMESH Mosfet | ST Microelectronics |
| 1180905 | STW20NM50 | N-CHANNEL 500V - 0.20 OHM - 20A TO-247 MDMESH ENERGIE MOSFET | ST Microelectronics |
| 1180906 | STW20NM50 | N-CHANNEL 500V 0.20 ENERGIE MOSFET DES OHM-20A TO-247 MDMESH | SGS Thomson Microelectronics |
| 1180907 | STW20NM50FD | N-CHANNEL 500V 0.22 ENERGIE MOSFET DES OHM-20A TO-247 FDMESH | ST Microelectronics |
| 1180908 | STW20NM50FD | N-CHANNEL 500V 0.22 ENERGIE MOSFET DES OHM-20A TO-247 FDMESH | SGS Thomson Microelectronics |
| 1180909 | STW20NM60 | N-CHANNEL 600V - 0.26 OHM - 20A TO-247 MDMESH ENERGIE MOSFET | ST Microelectronics |
| 1180910 | STW20NM60 | N-CHANNEL 600V 0.25 ENERGIE MOSFET DES OHM-20A TO-247 MDMESH | SGS Thomson Microelectronics |
| 1180911 | STW20NM60FD | N-CHANNEL 600V 0.26 ENERGIE MOSFET DES OHM-20A TO-220 TO-220FP TO-247 FDMESH | ST Microelectronics |
| 1180912 | STW21N65M5 | N-Kanal 650 V, 0.150 Ohm, 17 A MDmesh (TM) V-Leistungs-MOSFETs in TO-247 | ST Microelectronics |
| 1180913 | STW21N90K5 | N-Kanal 900 V, 0,25 Ohm, 18,5 A TO-247 Z-geschützten SuperMESH (TM) 5 Power MOSFET | ST Microelectronics |
| 1180914 | STW21NM60ND | N-Kanal 600 V, 0,17 Ohm typ. 17 A, FDmesh (TM) II Power MOSFET (Whit schnelle Diode) im TO-247-Gehäuse | ST Microelectronics |
| 1180915 | STW220NF75 | N-CHANNEL 75V - 0.004 OHM - 120A TO-247 STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1180916 | STW22N95K5 | Automotive-N-Kanal 950 V, 0.280 Ohm typ., 17.5 Eine Zener-geschützt SuperMESH (TM) 5 Power MOSFET in TO-247-Gehäuse | ST Microelectronics |
| 1180917 | STW22NM60N | N-Kanal 600 V, 0,2 Ohm, 16 A MDmesh (TM) II Power MOSFET in TO-247 | ST Microelectronics |
| 1180918 | STW23N85K5 | N-Kanal 850 V, 0,2 Ohm typ. 19 A Zener-geschützt SuperMESH (TM) V-Leistungs-MOSFETs in TO-247-Gehäuse | ST Microelectronics |
| 1180919 | STW23NM50N | N-Kanal 500 V, 0.162 Ohm, 17 A, TO-247 MDmesh (TM) II Power MOSFET | ST Microelectronics |
| 1180920 | STW23NM60ND | N-Kanal 600 V, 0.150 Ohm, 19,5 A, FDmesh II Power MOSFET (mit schnellen Diode) TO-247 | ST Microelectronics |
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