| Nr. | Teilname | Beschreibung | Hersteller |
| 1162481 | STB15NM60ND | N-Kanal 600 V - 0,27 Ohm - 14 A - FDmesh II Power MOSFET D2PAK - Leistungs-MOSFET | ST Microelectronics |
| 1162482 | STB160N75F3 | N-Kanal-75 V, 3,2 mOhm typ., 120 A STripFET (TM) Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162483 | STB160NF02L | N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162484 | STB160NF02L | N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162485 | STB160NF03L | N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162486 | STB160NF03L | N-CHANNEL 30V 0.0021 OHM - 160A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162487 | STB160NF3LL | N-CHANNEL 30V - 0.0026 OHM - 160A D2PAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1162488 | STB160NF3LL | N-CHANNEL 30V - 0.0026 OHM - 160A D2PAK STRIPFET II ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162489 | STB160NF3LLT4 | N-CHANNEL 30V - 0.0026 OHM - 160A D2PAK STRIPFET II ENERGIE MOSFET | ST Microelectronics |
| 1162490 | STB16N65M5 | N-Kanal 650 V, 0.230 Ohm, 12 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK | ST Microelectronics |
| 1162491 | STB16NB25 | N - FÜHRUNG 250V - 0.220Ohm - 16A - TO-263 PowerMESH Mosfet | SGS Thomson Microelectronics |
| 1162492 | STB16NF06L | N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162493 | STB16NF06L | N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162494 | STB16NF06LT4 | N-CHANNEL 60V - 0.07 OHM - 16A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162495 | STB16NK60Z-S | N-CHANNEL 600V - 0.38 Ohm - 14A TO-220/I2SPAK/TO-247 Zener-Geschützter SuperMESH™ Mosfet | ST Microelectronics |
| 1162496 | STB16NK65Z-S | N-CHANNEL 650 V - 0.38 Ohm - 13 Ein TO-220/ISPAK Zener-Geschützter SuperMESH™ Mosfet | ST Microelectronics |
| 1162497 | STB16NS25 | N-CHANNEL 250V - 0.23 OHM - 16A D2PAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1162498 | STB16NS25 | N-CHANNEL 250V 0.23 INEINANDERGREIFEN-TESTBLATTMOSFET DES OHM-16A D2PAK | SGS Thomson Microelectronics |
| 1162499 | STB16NS25T4 | N-CHANNEL 250V - 0.23 OHM - 16A D2PAK INEINANDERGREIFEN-TESTBLATTMOSFET | ST Microelectronics |
| 1162500 | STB16PF06L | P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET Mosfet | ST Microelectronics |
| 1162501 | STB16PF06LT4 | P-CHANNEL 60V - 0.11 Ohm - 16A D2PAK STripFET Mosfet | ST Microelectronics |
| 1162502 | STB170NF04 | N-Kanal-40 V, 4,4 mOhm typ. 80 A STripFET (TM) II Power MOSFET in einem Paket D2PAK | ST Microelectronics |
| 1162503 | STB185N55F3 | N-Kanal-55 V, 3,2 mOhm typ., 120 A STripFET (TM) Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162504 | STB18N20 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162505 | STB18N20 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162506 | STB18N20 | N - FÜHRUNG VERBESSERUNG MODUS-ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162507 | STB18N55M5 | N-Kanal 550 V, 0.150 Ohm typ., 16 A, MDmesh (TM) V-Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162508 | STB18N60M2 | N-Kanal 600 V, 0.255 Ohm typ. 13 A MDmesh II Plus (TM) niedriger Qg Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162509 | STB18N65M5 | N-Kanal 650 V, 0.198 Ohm typ. 15 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162510 | STB18NF25 | N-Kanal 250 V, 0,14 Ohm, 17 Eine niedrige Gate-Ladung STripFET (TM) II Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162511 | STB18NF30 | Automotive-N-Kanal 330 V, 160 mOhm typ. 18 A STripFET (TM) II Power MOSFET in einem Paket D2PAK | ST Microelectronics |
| 1162512 | STB18NM60ND | N-Kanal 600 V, 0,25 Ohm typ. 13 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK Verpackung | ST Microelectronics |
| 1162513 | STB18NM80 | N-Kanal 800 V, 0,25 Ohm, 17 A, MDmesh (TM) Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162514 | STB190NF04 | N-CHANNEL 40V - mOhm 3.9 - 120A D2PAK/I2PAK/TO-220 STripFET II ENERGIE MOSFET | ST Microelectronics |
| 1162515 | STB190NF04/-1 | N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II ENERGIEMOSFET | ST Microelectronics |
| 1162516 | STB190NF04/-1 | N-CHANNEL 40V - 3.9 mW - 120A D2PAK/I2PAK/TO-220 STripFET II ENERGIEMOSFET | ST Microelectronics |
| 1162517 | STB190NF04T4 | N-CHANNEL 40V - mOhm 3.9 - 120A D2PAK/I2PAK/TO-220 STripFET II ENERGIE MOSFET | ST Microelectronics |
| 1162518 | STB19NB20 | N-CHANNEL 200V - 0.150 OHM - 19A D2PAK POWERMESH MOSFET | ST Microelectronics |
| 1162519 | STB19NB20 | N-CHANNEL 200V - 0.150 OHM - 19A D2PAK POWERMESH MOSFET | SGS Thomson Microelectronics |
| 1162520 | STB19NB20 | N - FÜHRUNG VERBESSERUNG MODUS PowerMESH Mosfet | SGS Thomson Microelectronics |
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