| Nr. | Teilname | Beschreibung | Hersteller |
| 1162601 | STB25NM60NT4 | N-CHANNEL 650 @Tjmax-0.140&-20A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZWEITES ERZEUGUNG MDmesh Mosfet | ST Microelectronics |
| 1162602 | STB26NM60N | N-Kanal 600 V, 0.135 Ohm typ. 20 A MDmesh (TM) II Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162603 | STB26NM60ND | N-Kanal 600 V, 0.145 Ohm typ. 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK Verpackung | ST Microelectronics |
| 1162604 | STB270N4F3 | N-Kanal-40 V, 1,6 mOhm typ., 160 A STripFET (TM) III Power-MOSFETs im D2PAK-Paket | ST Microelectronics |
| 1162605 | STB27NM60ND | N-Kanal 600 V, 0,13 Ohm, 21 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK | ST Microelectronics |
| 1162606 | STB28N60M2 | N-Kanal 600 V, 0.135 Ohm typ. 22 A MDmesh II Plus (TM) niedriger Qg Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162607 | STB28NM50N | N-Kanal 500 V, 0.135 Ohm typ. 21 A MDmesh (TM) II Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162608 | STB28NM60ND | N-Kanal 600 V, 0.120 Ohm typ. 24 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) in D2PAK Verpackung | ST Microelectronics |
| 1162609 | STB2N62K3 | N-Kanal 620 V, 3 Ohm, 2,2 A, D2PAK SuperMESH3 (TM) Power MOSFET | ST Microelectronics |
| 1162610 | STB3015 | N - FÜHRUNG 30V - 0.013 Ohm - 40A - D2PAK/TO-220 STripFETO ENERGIEMOSFET | ST Microelectronics |
| 1162611 | STB3015 | N - FÜHRUNG 30V - 0.013 Ohm - 40A - D2PAK/TO-220 STripFETO ENERGIEMOSFET | ST Microelectronics |
| 1162612 | STB3015L | N-CHANNEL 30V - 0.013 OHM - 40A D2PAK/TO-220 STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162613 | STB3015L | N - FÜHRUNG 30V - 0.013 W - 40A - D 2 PAK/TO-220 STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162614 | STB3015L | N-CHANNEL 30V - 0.013 OHM - 40A D2PAK/TO-220 STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162615 | STB3020L | N - FÜHRUNG 30V - 0.019W - 40A - D 2 PAK STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162616 | STB30N10 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | ST Microelectronics |
| 1162617 | STB30N10 | ALTES PRODUKT: NICHT VERWENDBAR FÜR NEUES DESIGN-IN | SGS Thomson Microelectronics |
| 1162618 | STB30N10 | N - FÜHRUNG 100V - 0.06Ohm - 30A - D 2 PAK ENERGIE MOS TRANSISTOR | SGS Thomson Microelectronics |
| 1162619 | STB30N65M5 | N-Kanal 650 V, 0.125 Ohm, 22 A, MDmesh (TM) V Power MOSFET D2PAK | ST Microelectronics |
| 1162620 | STB30NE06L | N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162621 | STB30NE06L | N-CHANNEL 60V - 0.35 OHM - 30A D2PAK STRIPFET ENERGIE MOSFET | SGS Thomson Microelectronics |
| 1162622 | STB30NE06L | N - FÜHRUNG 60V - 0.35 Ohm - 30A - D 2 PAK STripFET ENERGIE Mosfet | SGS Thomson Microelectronics |
| 1162623 | STB30NF10 | N-CHANNEL 100V 0.038 GATTER-AUFLADUNG STRIPFET DES OHM-35A TO-220/TO-220FP/D2PAK NIEDRIGER ENERGIE II MOSFET | ST Microelectronics |
| 1162624 | STB30NF10 | N-CHANNEL 100V 0.038 GATTER-AUFLADUNG STRIPFET DES OHM-35A TO-220/TO-220FP/D2PAK NIEDRIGER ENERGIE II MOSFET | SGS Thomson Microelectronics |
| 1162625 | STB30NF10T4 | N-CHANNEL 100V 0.038 GATTER-AUFLADUNG STRIPFET DES OHM-35A TO-220/TO-220FP/D2PAK NIEDRIGER ENERGIE II MOSFET | ST Microelectronics |
| 1162626 | STB30NF20 | N-Kanal 200 V, 0.065 Ohm, 30 A, D2PAK STripFET (TM) Power MOSFET | ST Microelectronics |
| 1162627 | STB30NF20L | N-Kanal 200 V, 0.065 Ohm, 30 A, D2PAK STripFET (TM) Power MOSFET | ST Microelectronics |
| 1162628 | STB30NS15 | N-CHANNEL 150V - 0.075 OHM - 30A D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
| 1162629 | STB31N65M5 | N-Kanal 650 V, 0.124 Ohm, 22 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162630 | STB32N65M5 | N-Kanal 650 V, 0.095 Ohm, 24 A, MDmesh (TM) V-Leistungs-MOSFETs in D2PAK | ST Microelectronics |
| 1162631 | STB32NM50N | N-Kanal 500 V, 0,1 Ohm typ. 22 A MDmesh (TM) II Power MOSFET in D2PAK Verpackung | ST Microelectronics |
| 1162632 | STB33N60M2 | N-Kanal 600 V, 0.108 Ohm typ. 26 A MDmesh II Plus (TM) niedriger Qg Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162633 | STB34N65M5 | N-Kanal 650 V, 0,09 Ohm, 28 A MDmesh (TM) V-Leistungs-MOSFETs in D2PAK Verpackung | ST Microelectronics |
| 1162634 | STB34NM60N | N-Kanal 600 V, 0.092 Ohm, 29 A, MDmesh (TM) II Power MOSFET in D2PAK | ST Microelectronics |
| 1162635 | STB34NM60ND | N-Kanal 600 V, 0.097 Ohm, 29 A FDmesh (TM) II Power MOSFET (mit schnellen Diode) D2PAK | ST Microelectronics |
| 1162636 | STB35N65M5 | N-Kanal 650 V, 0.085 Ohm, 27 A, MDmesh (TM) V-Leistungs-MOSFETs in D2PAK | ST Microelectronics |
| 1162637 | STB35NF10 | N-CHANNEL 100V 0.030 GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET DES OHM-40A TO-220/D2PAK NIEDRIGER | ST Microelectronics |
| 1162638 | STB35NF10 | N-CHANNEL 100V 0.030 GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET DES OHM-40A TO-220/D2PAK NIEDRIGER | SGS Thomson Microelectronics |
| 1162639 | STB35NF10T4 | N-CHANNEL 100V 0.030 GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET DES OHM-40A TO-220/D2PAK NIEDRIGER | ST Microelectronics |
| 1162640 | STB36NF02L | N-CHANNEL 20V - 0.016 OHM - 36A - D2PAK NIEDRIGER GATTER-AUFLADUNG STRIPFET ENERGIE MOSFET | ST Microelectronics |
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