| Nr. | Teilname | Beschreibung | Hersteller |
| 47841 | 2N5657 | TRANSISTOR DES SILIKON-NPN | SGS Thomson Microelectronics |
| 47842 | 2N5657 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 47843 | 2N5657 | Energie 1A 350V NPN | ON Semiconductor |
| 47844 | 2N5659 | SCHNELLNPN TRANSISTOR 120 VOLT | Solid State Devices Inc |
| 47845 | 2N5659 | SCHNELLNPN TRANSISTOR 120 VOLT | Solid State Devices Inc |
| 47846 | 2N5660 | NPN Transistor | Microsemi |
| 47847 | 2N5661 | NPN Transistor | Microsemi |
| 47848 | 2N5662 | NPN Transistor | Microsemi |
| 47849 | 2N5663 | NPN Transistor | Microsemi |
| 47850 | 2N5663 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
| 47851 | 2N5664 | NPN Transistor | Microsemi |
| 47852 | 2N5664 | Span-Art Polarität NPN Der 2C5664 Geometrie-9221 | Semicoa Semiconductor |
| 47853 | 2N5664SMD | NPN ZWEIPOLIGER TRANSISTOR IN Einem KERAMISCHEN OBERFLÄCHENEINFASSUNG PAKET FÜR HOHE REL ANWENDUNGEN | SemeLAB |
| 47854 | 2N5665 | NPN Transistor | Microsemi |
| 47855 | 2N5665 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto66 | SemeLAB |
| 47856 | 2N5666 | NPN Transistor | Microsemi |
| 47857 | 2N5666 | Span-Art Polarität NPN Der 2C5664 Geometrie-9221 | Semicoa Semiconductor |
| 47858 | 2N5666S | NPN Transistor | Microsemi |
| 47859 | 2N5667 | NPN Transistor | Microsemi |
| 47860 | 2N5667S | NPN Transistor | Microsemi |
| 47861 | 2N5671 | NPN Transistor | Microsemi |
| 47862 | 2N5671 | ENERGIE TRANSISTORS(30A, 140w) | MOSPEC Semiconductor |
| 47863 | 2N5671 | Hochstrom, High-Power, High-Speed-Silizium-NPN Planartransistor. | General Electric Solid State |
| 47864 | 2N5672 | NPN Transistor | Microsemi |
| 47865 | 2N5672 | ENERGIE TRANSISTORS(30A, 140w) | MOSPEC Semiconductor |
| 47866 | 2N5672 | Hochstrom, High-Power, High-Speed-Silizium-NPN Planartransistor. | General Electric Solid State |
| 47867 | 2N5675 | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
| 47868 | 2N5675 | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto39 | SemeLAB |
| 47869 | 2N5679 | PNP Transistor | Microsemi |
| 47870 | 2N5679 | PNP/NPN HOCHSPANNUNGSSILIKON-TRANSISTOREN | Boca Semiconductor Corporation |
| 47871 | 2N5679 | PNP SILIKON-TRANSISTOREN | SemeLAB |
| 47872 | 2N5679 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47873 | 2N5679 | 10.000W High Voltage PNP Metall kann der Transistor. 100V Vceo, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47874 | 2N5679 | 1,0 Amp 10 Watt NPN-PNP komplementären Macht. | Fairchild Semiconductor |
| 47875 | 2N5680 | PNP Transistor | Microsemi |
| 47876 | 2N5680 | PNP/NPN HOCHSPANNUNGSSILIKON-TRANSISTOREN | Boca Semiconductor Corporation |
| 47877 | 2N5680 | PNP SILIKON-TRANSISTOREN | SemeLAB |
| 47878 | 2N5680 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 47879 | 2N5680 | 10.000W High Voltage PNP Metall kann der Transistor. 120V Vceo, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47880 | 2N5680 | 1,0 Amp 10 Watt NPN-PNP komplementären Macht. | Fairchild Semiconductor |
| | | |
