| Nr. | Teilname | Beschreibung | Hersteller |
| 48681 | 2N6353 | NPN Darlington Transistor | Microsemi |
| 48682 | 2N6354 | 120V, 10A, 140W Silizium NPN Planartransistor. | General Electric Solid State |
| 48683 | 2N6371 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48684 | 2N6371 | 40V Hochleistungssilizium NPN-Transistor | Comset Semiconductors |
| 48685 | 2N6371 | High-Power-Silizium NPN-Transistor. 50V, 117W. | General Electric Solid State |
| 48686 | 2N6371HV | Energie TO-3 Paket-Transistoren (NPN) | Unknow |
| 48687 | 2N6371HV | Energie TO-3 Paket-Transistoren (NPN) | Unknow |
| 48688 | 2N6372 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48689 | 2N6373 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48690 | 2N6374 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48691 | 2N6383 | NPN Darlington Transistor | Microsemi |
| 48692 | 2N6383 | ENERGIE TRANSISTORS(10A, 100w) | MOSPEC Semiconductor |
| 48693 | 2N6383 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48694 | 2N6383 | 10 A NPN Darlington-Leistungstransistor. 40 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 48695 | 2N6384 | NPN Darlington Transistor | Microsemi |
| 48696 | 2N6384 | ENERGIE TRANSISTORS(10A, 100w) | MOSPEC Semiconductor |
| 48697 | 2N6384 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48698 | 2N6384 | 10 A NPN Darlington-Leistungstransistor. 60 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 48699 | 2N6385 | NPN Darlington Transistor | Microsemi |
| 48700 | 2N6385 | ENERGIE TRANSISTORS(10A, 100w) | MOSPEC Semiconductor |
| 48701 | 2N6385 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48702 | 2N6385 | 10 A NPN Darlington-Leistungstransistor. 80 V. 100 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 48703 | 2N6386 | ENERGIE TRANSISTORS(65W) | MOSPEC Semiconductor |
| 48704 | 2N6386 | DARLINGTON SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48705 | 2N6386 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48706 | 2N6386 | 10 A NPN Darlington-Leistungstransistor. 40 V. 65 W. Gewinn von 1000 bei 3 A. | General Electric Solid State |
| 48707 | 2N6387 | ENERGIE TRANSISTORS(65W) | MOSPEC Semiconductor |
| 48708 | 2N6387 | DARLINGTON SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48709 | 2N6387 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48710 | 2N6387 | DARLINGTON NPN SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 48711 | 2N6387 | 10 A NPN Darlington-Leistungstransistor. 60 V. 65 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
| 48712 | 2N6387-D | PlastikMittel-energie Silikon-Transistoren | ON Semiconductor |
| 48713 | 2N6388 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOR | ST Microelectronics |
| 48714 | 2N6388 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOR | SGS Thomson Microelectronics |
| 48715 | 2N6388 | ENERGIE DARLINGTON DES SILIKON-NPN TRANSISTOR | SGS Thomson Microelectronics |
| 48716 | 2N6388 | ENERGIE TRANSISTORS(65W) | MOSPEC Semiconductor |
| 48717 | 2N6388 | DARLINGTON SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48718 | 2N6388 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48719 | 2N6388 | Energie 8A 80V Darlington NPN | ON Semiconductor |
| 48720 | 2N6388 | 10 A NPN Darlington-Leistungstransistor. 80 V. 65 W. Gewinn von 1000 bei 5 A. | General Electric Solid State |
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