| Nr. | Teilname | Beschreibung | Hersteller |
| 48761 | 2N6420 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48762 | 2N6420 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
| 48763 | 2N6421 | ENERGIE TRANSISTORS(35W) | MOSPEC Semiconductor |
| 48764 | 2N6421 | ERGÄNZENDE MEDIUM-POWER HOCHSPANNUNGSENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48765 | 2N6421 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48766 | 2N6421 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
| 48767 | 2N6422 | ENERGIE TRANSISTORS(35W) | MOSPEC Semiconductor |
| 48768 | 2N6422 | ERGÄNZENDE MEDIUM-POWER HOCHSPANNUNGSENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48769 | 2N6422 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48770 | 2N6422 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
| 48771 | 2N6423 | ENERGIE TRANSISTORS(35W) | MOSPEC Semiconductor |
| 48772 | 2N6423 | ERGÄNZENDE MEDIUM-POWER HOCHSPANNUNGSENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48773 | 2N6423 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48774 | 2N6423 | Hochspannung, Mittelleistungs Silizium PNP-Transistor. | General Electric Solid State |
| 48775 | 2N6424 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48776 | 2N6424 | PNP-Transistor, 225V, 0.25A | SemeLAB |
| 48777 | 2N6425 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48778 | 2N6425 | Zweipolige PNP Vorrichtung in einem hermetisch Siegel-paket des Metallto66 | SemeLAB |
| 48779 | 2N6426 | NPN Darlington Transistor | Fairchild Semiconductor |
| 48780 | 2N6426 | Verbleiter Kleiner Signal-Transistor Darlington | Central Semiconductor |
| 48781 | 2N6426 | Kleines Signal Darlington NPN | ON Semiconductor |
| 48782 | 2N6426-D | Silikon Der Darlington Transistor-NPN | ON Semiconductor |
| 48783 | 2N6426RLRA | Kleines Signal Darlington NPN | ON Semiconductor |
| 48784 | 2N6426_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 48785 | 2N6426_D74Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 48786 | 2N6427 | NPN Darlington Transistor | Fairchild Semiconductor |
| 48787 | 2N6427 | NPN Darlington Transistor | Philips |
| 48788 | 2N6427 | Verbleiter Kleiner Signal-Transistor Darlington | Central Semiconductor |
| 48789 | 2N6427 | Kleines Signal Darlington NPN | ON Semiconductor |
| 48790 | 2N6427 | NPN EPITAXIAL- TRANSISTOR DES SILIKON-DARLINGTON | Samsung Electronic |
| 48791 | 2N6427RLRA | Kleines Signal Darlington NPN | ON Semiconductor |
| 48792 | 2N6427_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 48793 | 2N6427_D27Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 48794 | 2N6427_D75Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 48795 | 2N6428 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
| 48796 | 2N6428 | NPN EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 48797 | 2N6428 | Verstärkertransistoren. Kollektor-Emitter-Spannung: 50V = Vceo. Kollektor-Basis-Spannung: 60V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 48798 | 2N6428A | NPN EPITAXIAL- SILIKON-TRANSISTOR | Samsung Electronic |
| 48799 | 2N6428A | Verstärkertransistoren. Kollektor-Emitter-Spannung: 50V = Vceo. Kollektor-Basis-Spannung: 60V = VCBO. Collector Ableitung: Pc (max) = 625mW. | USHA India LTD |
| 48800 | 2N6430 | Verbleiter Kleiner Signal-Transistor-Universeller Zweck | Central Semiconductor |
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