| Nr. | Teilname | Beschreibung | Hersteller |
| 48481 | 2N6250 | NPN SILIKON-TRANSISTOR | Central Semiconductor |
| 48482 | 2N6250 | 375V, 30A, 175W Silizium NPN switcing Transistor. | General Electric Solid State |
| 48483 | 2N6251 | NPN Transistor | Microsemi |
| 48484 | 2N6251 | NPN SILIKON-TRANSISTOR | Central Semiconductor |
| 48485 | 2N6251 | 450V, 30A, 175W Silizium NPN switcing Transistor. | General Electric Solid State |
| 48486 | 2N6253 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto3 | SemeLAB |
| 48487 | 2N6253 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48488 | 2N6253 | 45V Hochleistungssilizium NPN-Transistor | Comset Semiconductors |
| 48489 | 2N6253 | High-Power-Silizium NPN-Transistor. 55V, 115W. | General Electric Solid State |
| 48490 | 2N6254 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48491 | 2N6254 | Silikon-Transistoren | Advanced Semiconductor |
| 48492 | 2N6254 | 80V Hochleistungssilizium NPN-Transistor | Comset Semiconductors |
| 48493 | 2N6254 | High-Power-Silizium NPN-Transistor. 100V, 150W. | General Electric Solid State |
| 48494 | 2N6255 | RF U. MIKROWELLE GETRENNTE NIEDRIGE ENERGIE TRANSISTOREN | Microsemi |
| 48495 | 2N6257 | Energie TO-3 Paket-Transistoren (NPN) | Unknow |
| 48496 | 2N6257 | Energie TO-3 Paket-Transistoren (NPN) | Unknow |
| 48497 | 2N6259 | ENERGIE TRANSISTORS(16A, 150v, 150w) | MOSPEC Semiconductor |
| 48498 | 2N6259 | Hochspannung, Hochleistungstransistor. 170V, 250W. | General Electric Solid State |
| 48499 | 2N6260 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48500 | 2N6261 | TRANSISTOR DES HOMETAXIAL-BASE MITTLERER ENERGIE SILIKON-NPN | SemeLAB |
| 48501 | 2N6261 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48502 | 2N6262 | Hochspannung Silizium NPN-Transistor. 170V, 150W. | General Electric Solid State |
| 48503 | 2N6263 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 48504 | 2N6263 | Zweipolige NPN Vorrichtung | SemeLAB |
| 48505 | 2N6263 | Mittlerer Leistung Silizium NPN-Transistor. 140V, 20W. | General Electric Solid State |
| 48506 | 2N6264 | Zweipolige NPN Vorrichtung | SemeLAB |
| 48507 | 2N6264 | Mittlerer Leistung Silizium NPN-Transistor. 170V, 50W. | General Electric Solid State |
| 48508 | 2N6270 | Zweipolige NPN Vorrichtung in einem hermetisch Siegel-paket des Metallto3. | SemeLAB |
| 48509 | 2N6274 | NPN Transistor | Microsemi |
| 48510 | 2N6274 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 48511 | 2N6275 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 48512 | 2N6276 | Zweipolige NPN Vorrichtung | SemeLAB |
| 48513 | 2N6277 | NPN Transistor | Microsemi |
| 48514 | 2N6277 | SILIKON DER ENERGIE TRANSISTOR-NPN | ON Semiconductor |
| 48515 | 2N6282 | ENERGIE TRANSISTORS(20A, 160w) | MOSPEC Semiconductor |
| 48516 | 2N6282 | DARLINGTON COPLEMENTARY SILIKON-ENERGIE TRANSISTOREN | Boca Semiconductor Corporation |
| 48517 | 2N6282 | Verbleiter Energie Transistor Darlington | Central Semiconductor |
| 48518 | 2N6282 | DARLINGTON ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ON Semiconductor |
| 48519 | 2N6282 | 20 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 60 V (min). 160 W. | General Electric Solid State |
| 48520 | 2N6283 | NPN Darlington Transistor | Microsemi |
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