| Nr. | Teilname | Beschreibung | Hersteller |
| 881761 | MJE15032 | Transistor, Energie NPN, audo Treiber | ON Semiconductor |
| 881762 | MJE15032 | 50.000W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE | Continental Device India Limited |
| 881763 | MJE15032-D | Ergänzendes Silikon-Plastikenergie Transistoren | ON Semiconductor |
| 881764 | MJE15033 | 8.0 AMPERE ENERGIE TRANSISTOR-ERGÄNZENDE SILIKON-250 VOLT 50 WATT | Motorola |
| 881765 | MJE15033 | 50.000W General Purpose PNP Plastic Leaded Transistor. 250V Vceo, 8.000A Ic, 50 - hFE | Continental Device India Limited |
| 881766 | MJE15033 | Kostenlose Silicon Kunststoff-Leistungstransistoren | ON Semiconductor |
| 881767 | MJE15034 | Transistor, NPN Energie, Audiotreiber | ON Semiconductor |
| 881768 | MJE15035 | Transistor, PNP Energie, Audiotreiber | ON Semiconductor |
| 881769 | MJE16002 | ENERGIE TRANSISTORS(5A, 450v, 80w) | MOSPEC Semiconductor |
| 881770 | MJE16002 | SILIKON-ENERGIE TRANSISTOREN 5.0 AMPERE-NPN 450 VOLT 80 WATT | Motorola |
| 881771 | MJE16002 | 5 A SwitchMax II-Leistungstransistor. Hochspannung NPN-Typ. | General Electric Solid State |
| 881772 | MJE16002-D | SWITCHMODE Reihe NPN Silikon-Energie Transistoren | ON Semiconductor |
| 881773 | MJE16004 | ENERGIE TRANSISTORS(5A, 450v, 80w) | MOSPEC Semiconductor |
| 881774 | MJE16004 | SILIKON-ENERGIE TRANSISTOREN 5.0 AMPERE-NPN 450 VOLT 80 WATT | Motorola |
| 881775 | MJE16004 | 5 A SwitchMax II-Leistungstransistor. Hochspannung NPN-Typ. | General Electric Solid State |
| 881776 | MJE16106 | ENERGIE TRANSISTOREN 8 AMPERE 400 VOLT 100 UND 125 WATT | Motorola |
| 881777 | MJE16204 | ENERGIE TRANSISTOREN 6.0 AMPERE 550 VOLT -. VCES 45 UND 80 WATT | Motorola |
| 881778 | MJE16204-D | SCANSWITCH NPN zweipoliger Energie Ablenkung Transistor für Höhe und sehr hohe Auflösung Monitoren ENERGIE TRANSISTOREN 6A 45 und 80 Watt 550 Volt | ON Semiconductor |
| 881779 | MJE170 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881780 | MJE170 | ENERGIE TRANSISTORS(3.0A, 40-80V, 12.5w) | MOSPEC Semiconductor |
| 881781 | MJE170 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881782 | MJE170 | 12.500W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 3.000A Ic, 50-250 hFE. | Continental Device India Limited |
| 881783 | MJE170 | -60 V, -3 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
| 881784 | MJE170STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881785 | MJE171 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881786 | MJE171 | ENERGIE TRANSISTORS(3.0A, 40-80V, 12.5w) | MOSPEC Semiconductor |
| 881787 | MJE171 | 3 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 60-80 VOLT 12.5 WATT | Motorola |
| 881788 | MJE171 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| 881789 | MJE171 | Energie 3A 60V PNP | ON Semiconductor |
| 881790 | MJE171 | 12.500W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 3.000A Ic, 50-250 hFE. | Continental Device India Limited |
| 881791 | MJE171 | -80 V, -1 A, PNP Siliziumepitaxieschicht Transistor | Samsung Electronic |
| 881792 | MJE171-D | Ergänzende Plastiksilikon-Energie Transistoren NPN | ON Semiconductor |
| 881793 | MJE171STU | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881794 | MJE172 | PNP Epitaxial- Silikon-Transistor | Fairchild Semiconductor |
| 881795 | MJE172 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | ST Microelectronics |
| 881796 | MJE172 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881797 | MJE172 | ERGÄNZENDE SILIKON-ENERGIE TRANSISTOREN | SGS Thomson Microelectronics |
| 881798 | MJE172 | ENERGIE TRANSISTORS(3.0A, 40-80V, 12.5w) | MOSPEC Semiconductor |
| 881799 | MJE172 | 3 AMPERE-ENERGIE TRANSISTOR-ERGÄNZENDES SILIKON 60-80 VOLT 12.5 WATT | Motorola |
| 881800 | MJE172 | Verbleiter Energie Transistor-Universeller Zweck | Central Semiconductor |
| | | |
