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Datenblaetter Gefunden :: 1013 English Version for this page Version française pour cette page Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version Romanian Version
Nr.TeilnameBeschreibungHersteller
2012N605712A NPN monolithischen Darlington-Leistungstransistor.General Electric Solid State
2022N605812A NPN monolithischen Darlington-Leistungstransistor.General Electric Solid State
2032N605912A NPN monolithischen Darlington-Leistungstransistor.General Electric Solid State
2042N6076PNP Silikon-Transistor. 25V, 100mA.General Electric Solid State
2052N6077Hochspannungs-Hochleistungs-Silizium-NPN-Transistor.General Electric Solid State
2062N6078Hochspannungs-Hochleistungs-Silizium-NPN-Transistor.General Electric Solid State
2072N6079Hochspannungs-Hochleistungs-Silizium-NPN-Transistor.General Electric Solid State
2082N6106Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V.General Electric Solid State
2092N6107Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V.General Electric Solid State
2102N6108Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V.General Electric Solid State



2112N6109Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V.General Electric Solid State
2122N6110Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -40 V.General Electric Solid State
2132N6111Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -40 V.General Electric Solid State
2142N6121Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 45V.General Electric Solid State
2152N6122Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V.General Electric Solid State
2162N6123Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V.General Electric Solid State
2172N6124Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -45V.General Electric Solid State
2182N6125Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -60V.General Electric Solid State
2192N6126Epitaxial-Basis, Silizium PNP VERSAWATT Transistor. -80 V.General Electric Solid State
2202N6211Hochspannung, Mittelleistungs Silizium PNP-Transistor.General Electric Solid State
2212N6212Hochspannung, Mittelleistungs Silizium PNP-Transistor.General Electric Solid State
2222N6213Hochspannung, Mittelleistungs Silizium PNP-Transistor.General Electric Solid State
2232N6214Hochspannung, Mittelleistungs Silizium PNP-Transistor.General Electric Solid State
2242N6246Epitaxial-Basis, Silizium PNP Hochleistungstransistor. -70V, 125W.General Electric Solid State
2252N6247Epitaxial-Basis, Silizium PNP Hochleistungstransistor. -90V, 125W.General Electric Solid State
2262N6248Epitaxial-Basis, Silizium PNP Hochleistungstransistor. -110V, 125W.General Electric Solid State
2272N6249300V, 30A, 175W Silizium NPN switcing Transistor.General Electric Solid State
2282N6250375V, 30A, 175W Silizium NPN switcing Transistor.General Electric Solid State
2292N6251450V, 30A, 175W Silizium NPN switcing Transistor.General Electric Solid State
2302N6253High-Power-Silizium NPN-Transistor. 55V, 115W.General Electric Solid State
2312N6254High-Power-Silizium NPN-Transistor. 100V, 150W.General Electric Solid State
2322N6259Hochspannung, Hochleistungstransistor. 170V, 250W.General Electric Solid State
2332N6262Hochspannung Silizium NPN-Transistor. 170V, 150W.General Electric Solid State
2342N6263Mittlerer Leistung Silizium NPN-Transistor. 140V, 20W.General Electric Solid State
2352N6264Mittlerer Leistung Silizium NPN-Transistor. 170V, 50W.General Electric Solid State
2362N628220 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 60 V (min). 160 W.General Electric Solid State
2372N628320 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 80 V (min). 160 W.General Electric Solid State
2382N628420 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 100 V (min). 160 W.General Electric Solid State
2392N628520 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 60 V (min). 160 W.General Electric Solid State
2402N628620 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 80 V (min). 160 W.General Electric Solid State
2412N628720 A komplementären NPN und PNP monolithischen Darlington-Leistungstransistor. Hohe Nennspannung 100 V (min). 160 W.General Electric Solid State
2422N6288Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 40V.General Electric Solid State
2432N6289Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 40V.General Electric Solid State
2442N6290Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V.General Electric Solid State
2452N6291Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 60V.General Electric Solid State
2462N6292Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V.General Electric Solid State
2472N6293Epitaxial-Basis, Silizium NPN VERSAWATT Transistor. 80V.General Electric Solid State
2482N6342A12-A Silizium Triac. 200 V.General Electric Solid State
2492N6343A12-A Silizium Triac. 400 V.General Electric Solid State
2502N6344A12-A Silizium Triac. 600 V.General Electric Solid State



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