Nr. | Nombre de la parte | Descripción | Fabricante |
351 | 2N687 | 25A rectificador controlado de silicio. Vrsom 400V. | General Electric Solid State |
352 | 2N688 | 25A rectificador controlado de silicio. Vrsom 500V. | General Electric Solid State |
353 | 2N689 | 25A rectificador controlado de silicio. Vrsom 600V. | General Electric Solid State |
354 | 2N690 | 25A rectificador controlado de silicio. Vrsom 720V. | General Electric Solid State |
355 | 2N691 | 25A rectificador controlado de silicio. Vrsom 840V. | General Electric Solid State |
356 | 2N692 | 25A rectificador controlado de silicio. Vrsom 960V. | General Electric Solid State |
357 | 2N697 | Silicio NPN transistor planar. | General Electric Solid State |
358 | 3N128 | Transistor del MOS Del Silicio | General Electric Solid State |
359 | 3N142 | TRANSISTOR DE EFECTO DE CAMPO AISLADO SILICIO DE LA PUERTA | General Electric Solid State |
360 | 3N142 | TRANSISTOR DE EFECTO DE CAMPO AISLADO SILICIO DE LA PUERTA | General Electric Solid State |
361 | 3N143 | Transistor del MOS Del Silicio | General Electric Solid State |
362 | 3N143 | Transistor del MOS Del Silicio | General Electric Solid State |
363 | 3N152 | Transistor de silicio MOS. | General Electric Solid State |
364 | 3N153 | TRANSISTOR DE EFECTO DE CAMPO AISLADO SILICIO DE LA PUERTA | General Electric Solid State |
365 | 3N153 | TRANSISTOR DE EFECTO DE CAMPO AISLADO SILICIO DE LA PUERTA | General Electric Solid State |
366 | 3N154 | TRANSISTOR DEL MOS DEL SILICIO | General Electric Solid State |
367 | 3N154 | TRANSISTOR DEL MOS DEL SILICIO | General Electric Solid State |
368 | 3N187 | Dual de puerta aislada de efecto de campo transistor de silicio. | General Electric Solid State |
369 | 3N200 | Dual de puerta aislada de efecto de campo transistor de silicio. | General Electric Solid State |
370 | 3N204 | Dual de puerta aislada de efecto de campo transistor de silicio. | General Electric Solid State |
371 | 3N205 | Dual de puerta aislada de efecto de campo transistor de silicio. | General Electric Solid State |
372 | 3N206 | Dual de puerta aislada de efecto de campo transistor de silicio. | General Electric Solid State |
373 | 40346 | Silicio mediano aumento NPN transistor planar. | General Electric Solid State |
374 | 40347 | Transistor de silicio NPN. 60V, 8.75W. | General Electric Solid State |
375 | 40348 | Transistor de silicio NPN. 90V, 8.75W. | General Electric Solid State |
376 | 40406 | Silicio PNP transistor de potencia. -50V. | General Electric Solid State |
377 | 40407 | Silicio NPN transistor de potencia. 50V. | General Electric Solid State |
378 | 40408 | Silicio NPN transistor de potencia. 90V. | General Electric Solid State |
379 | 40411 | Silicio NPN transistor de potencia. 90V (RBE 100Ohm). | General Electric Solid State |
380 | 40412 | Silicio mediano aumento NPN transistor planar. | General Electric Solid State |
381 | BD142 | Silicio NPN transistor de alta potencia. 50V, 117W. | General Electric Solid State |
382 | BD181 | Silicio NPN transistor de alta potencia. 55V, 117W. | General Electric Solid State |
383 | BD182 | Silicio NPN transistor de alta potencia. 70V, 117W. | General Electric Solid State |
384 | BD183 | Silicio NPN transistor de alta potencia. 85V, 117W. | General Electric Solid State |
385 | BD201 | Epitaxial del silicio NPN VERSAWATT-base del transistor. 60V, 60W. | General Electric Solid State |
386 | BD202 | Epitaxial del silicio de PNP-base VERSAWATT transistor. -60V, 60W. | General Electric Solid State |
387 | BD203 | Epitaxial del silicio NPN VERSAWATT-base del transistor. 80V, 60W. | General Electric Solid State |
388 | BD204 | Epitaxial del silicio de PNP-base VERSAWATT transistor. -80V, 60W. | General Electric Solid State |
389 | BD239 | Transistor de potencia Pro electrón | General Electric Solid State |
390 | BD239A | Transistor de potencia Pro electrón | General Electric Solid State |
391 | BD239B | Transistor de potencia Pro electrón | General Electric Solid State |
392 | BD239C | Transistor de potencia Pro electrón | General Electric Solid State |
393 | BD240 | Epitaxial del silicio de PNP-base VERSAWATT transistor. Vcer -55V, 30W. | General Electric Solid State |
394 | BD240A | Epitaxial del silicio de PNP-base VERSAWATT transistor. Vcer -70V, 30W. | General Electric Solid State |
395 | BD240B | Epitaxial del silicio de PNP-base VERSAWATT transistor. Vcer -90V, 30W. | General Electric Solid State |
396 | BD240C | Epitaxial del silicio de PNP-base VERSAWATT transistor. Vcer -115V, 30W. | General Electric Solid State |
397 | BD241 | Epitaxial del silicio NPN VERSAWATT-base del transistor. Vcer 55V, 40W. | General Electric Solid State |
398 | BD241A | Epitaxial del silicio NPN VERSAWATT-base del transistor. Vcer 70V, 40W. | General Electric Solid State |
399 | BD241B | Epitaxial del silicio NPN VERSAWATT-base del transistor. Vcer 90V, 40W. | General Electric Solid State |
400 | BD241C | Epitaxial del silicio NPN VERSAWATT-base del transistor. Vcer 115V, 40W. | General Electric Solid State |
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