| Nr. | Nom de partie | Description | Fabricant |
| 47881 | 2N5681 | TRANSISTORS DU SILICIUM NPN | ST Microelectronics |
| 47882 | 2N5681 | Transistor de NPN | Microsemi |
| 47883 | 2N5681 | TRANSISTORS DU SILICIUM NPN | SGS Thomson Microelectronics |
| 47884 | 2N5681 | TRANSISTORS DU SILICIUM NPN | SGS Thomson Microelectronics |
| 47885 | 2N5681 | TRANSISTORS À HAUTE TENSION DE SILICIUM DE PNP/npn | Boca Semiconductor Corporation |
| 47886 | 2N5681 | TRANSISTORS DE SILICIUM DE NPN | SemeLAB |
| 47887 | 2N5681 | Petit Usage universel Plombé De Transistor De Signal | Central Semiconductor |
| 47888 | 2N5681 | 10.000W haute tension NPN métal peut transistor. 100V VCEO, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47889 | 2N5681 | 1.0 Amp 10 watts NPN-PNP puissance complémentaire. | Fairchild Semiconductor |
| 47890 | 2N5681SMD | 100v Vce, IC 1A, 30MHz transistor bipolaire NPN | SemeLAB |
| 47891 | 2N5682 | TRANSISTORS DU SILICIUM NPN | ST Microelectronics |
| 47892 | 2N5682 | Transistor de NPN | Microsemi |
| 47893 | 2N5682 | TRANSISTORS DU SILICIUM NPN | SGS Thomson Microelectronics |
| 47894 | 2N5682 | TRANSISTORS DU SILICIUM NPN | SGS Thomson Microelectronics |
| 47895 | 2N5682 | TRANSISTORS À HAUTE TENSION DE SILICIUM DE PNP/npn | Boca Semiconductor Corporation |
| 47896 | 2N5682 | TRANSISTORS DE SILICIUM DE NPN | SemeLAB |
| 47897 | 2N5682 | Petit Usage universel Plombé De Transistor De Signal | Central Semiconductor |
| 47898 | 2N5682 | 10.000W haute tension NPN métal peut transistor. 120V VCEO, 1.000A Ic, 5 hFE. | Continental Device India Limited |
| 47899 | 2N5682 | 1.0 Amp 10 watts NPN-PNP puissance complémentaire. | Fairchild Semiconductor |
| 47900 | 2N5683 | Transistor de PNP | Microsemi |
| 47901 | 2N5683 | PUISSANCE TRANSISTORS(50a, 300w) | MOSPEC Semiconductor |
| 47902 | 2N5684 | Transistor de PNP | Microsemi |
| 47903 | 2N5684 | PUISSANCE TRANSISTORS(50a, 300w) | MOSPEC Semiconductor |
| 47904 | 2N5684 | Puissance 50A 80V PNP Discret | ON Semiconductor |
| 47905 | 2N5684-D | Transistors De Puissance Complémentaires À forte intensité De Silicium | ON Semiconductor |
| 47906 | 2N5685 | Transistor de NPN | Microsemi |
| 47907 | 2N5685 | PUISSANCE TRANSISTORS(50a, 300w) | MOSPEC Semiconductor |
| 47908 | 2N5686 | Transistor de NPN | Microsemi |
| 47909 | 2N5686 | PUISSANCE TRANSISTORS(50a, 300w) | MOSPEC Semiconductor |
| 47910 | 2N5686 | Puissance 50A 80V NPN Discret | ON Semiconductor |
| 47911 | 2N5743 | Dispositif bipolaire de PNP dans un paquet hermétiquement scellé en métal TO66 | SemeLAB |
| 47912 | 2N5743 | Dispositif bipolaire de PNP dans un paquet hermétiquement scellé en métal TO66 | SemeLAB |
| 47913 | 2N5745 | Transistor de PNP | Microsemi |
| 47914 | 2N5745 | PUISSANCE TRANSISTORS(200w) | MOSPEC Semiconductor |
| 47915 | 2N5745 | TRANSISTORS De haute puissance de SILICIUM de PNP | Boca Semiconductor Corporation |
| 47916 | 2N5745 | Usage universel Plombé De Transistor De Puissance | Central Semiconductor |
| 47917 | 2N5754 | 2,5 Triac de silicium. Tension (typ) 100 V. | General Electric Solid State |
| 47918 | 2N5755 | 2,5 Triac de silicium. Tension (typ) 200 V. | General Electric Solid State |
| 47919 | 2N5756 | 2,5 Triac de silicium. Tension (typ) 400 V. | General Electric Solid State |
| 47920 | 2N5757 | 2,5 Triac de silicium. Tension (typ) 600 V. | General Electric Solid State |
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